Key points of high-power DC power supply technology

Release time:

2021-12-10

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Abstract

In the 1960s, the emergence of high-power DC power supplies gradually replaced linear voltage regulators and SCR phase-controlled power supplies. Over the past 40 years, high-power DC power supply technology has undergone rapid development and changes, experiencing three stages of development: power semiconductor devices, high frequency and soft switching technology, and the integration technology of high-power DC power supply systems.

In the 1960s, the emergence of high-power DC power supplies gradually replaced linear voltage regulators and SCR phase-controlled power supplies. Over the past 40 years, high-power DC power supply technology has undergone rapid development and transformation, experiencing three stages: power semiconductor devices, high-frequency technology, and soft-switching technology, as well as the integration technology of high-power DC power supply systems.

 

 

Power semiconductor devices have evolved from bipolar devices (BPT, SCR, GTO) to MOS-type devices (power MOSFET, IGBT, IGCT, etc.), enabling power electronic systems to achieve high frequency and significantly reduce conduction losses, making circuits simpler.

Since the 1980s, the development and research of high-frequency and soft-switching technologies have improved the performance of power converters, making them lighter and smaller. High-frequency and soft-switching technologies have been one of the hot research topics in the global power electronics field over the past 20 years.

In the mid-1990s, integrated power electronic systems and integrated power electronic module (IPEM) technologies began to develop. This is one of the new problems that urgently need to be solved in today's global power electronics field.

In 1998, Infineon launched the CoolMOS transistor, which uses a 'Super-Junction' structure, hence also known as Super Junction Power MOSFET. It operates at a voltage of 600V~800V, with on-resistance reduced by nearly an order of magnitude while maintaining fast switching speed, making it a promising high-frequency power semiconductor device.

When IGBT first appeared, its voltage and current ratings were only 600V and 25A. For a long time, the voltage withstand level was limited to 1200V~1700V. Through long-term research and improvement, the voltage and current ratings of IGBT have now reached 3300V/1200A and 4500V/1800A respectively. The voltage withstand of high-voltage IGBT chips has reached 6500V. The upper limit of operating frequency for general IGBT is 20kHz~40kHz. IGBTs made using new technologies based on the punch-through (PT) structure can operate at 150kHz (hard switching) and 300kHz (soft switching).

The technological advancement of IGBT is essentially a compromise among on-state voltage drop, fast switching, and high voltage capability. With different processes and structural types over its 20-year development history, there are several types of IGBT: punch-through (PT), non-punch-through (NPT), soft punch-through (SPT), trench type, and field-stop (FS) type.

Silicon carbide (SiC) is an ideal material for power semiconductor device chips. Its advantages include: wide bandgap, high operating temperature (up to 600℃), good thermal stability, low on-resistance, excellent thermal conductivity, minimal leakage current, and high breakdown voltage characteristics, which are beneficial for producing high-temperature resistant high-frequency high-power semiconductor devices.

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